1 n-ch and p-ch fast switching mosfets rating symbol parameter n-ch p-ch units v ds drain-source voltage 40 -40 v v gs gate-sou r ce voltage 20 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 32 -23 a i d @t c =100 continuous drain current, v gs @ 10v 1 25 -18 a i dm pulsed drain current 2 64 -46 a eas single pulse avalanche energy 3 55 66 mj i as avalanche current 25 -27.2 a p d @t c =25 total power dissipation 4 31.3 31.3 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62 /w r jc thermal resistance junction-case 1 --- 4 /w bvdss rdson id 40v 17m ? 32a -40v 40m ? -23a the UD4305 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD4305 meet the rohs and green product requirement 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z ccfl back-light inverter absolute maximum ratings thermal data to252 pin configuration product summery UD4305
2 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 40 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.032 --- v/ v gs =10v , i d =10a --- 14 17 r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d =6a --- 18 22 m v gs(th) gate threshold voltage 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua --- -4.8 --- mv/ v ds =32v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =32v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =10a --- 16.2 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.1 4.2 q g total gate charge (4.5v) --- 9.1 --- q gs gate-source charge --- 2.1 --- q gd gate-drain charge v ds =20v , v gs =4.5v , i d =12a --- 4.1 --- nc t d(on) turn-on delay time --- 15.2 --- t r rise time --- 3.6 --- t d(off) turn-off delay time --- 46.4 --- t f fall time v dd =15v , v gs =10v , r g =3.3 i d =1a --- 3.2 --- ns c iss input capacitance --- 1013 --- c oss output capacitance --- 107 --- c rss reverse transfer capacitance v ds =15v , v gs =0v , f=1mhz --- 76 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =15a 20 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- 32 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- 64 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =25a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. n-channel electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD4305
3 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -40 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.012 --- v/ v gs =-10v , i d =-6a --- 32 40 r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-3a --- 52 65 m v gs(th) gate threshold voltage -1.0 -1.6 -2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua --- 4.32 --- mv/ v ds =-32v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-32v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-10v , i d =-6a --- 12.6 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 13 16 q g total gate charge (-4.5v) --- 9 --- q gs gate-source charge --- 2.54 --- q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-12a --- 3.1 --- nc t d(on) turn-on delay time --- 19.2 --- t r rise time --- 12.8 --- t d(off) turn-off delay time --- 48.6 --- t f fall time v dd =-15v , v gs =-10v , r g =3.3 , i d =-1a --- 4.6 --- ns c iss input capacitance --- 1004 --- c oss output capacitance --- 108 --- c rss reverse transfer capacitance v ds =-15v , v gs =0v , f=1mhz --- 80 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-15a 20 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- -23 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- -46 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-27.2a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. p-channel electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD4305
4 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 12 00.250.50.751 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 12 14 16 18 20 246810 v gs (v) r dson (m ? ) i d =12a 0 4 8 12 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 2 4 6 8 10 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v i d =12a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD4305
5 n-ch and p-ch fast switching mosfets 10 100 1000 10000 1 5 9 13172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0 1 10 100 0.1 1 10 100 v ds (v) i d (a) 10us 100us 10ms 100ms dc t c =25 single pulse 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t j peak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.3 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching wave UD4305
6 n-ch and p-ch fast switching mosfets 0 2 4 6 8 10 12 00.511.52 -v ds drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 30 35 40 45 50 55 60 246810 -v gs (v) r dson (m ? ) i d =-12a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0 2 4 6 8 10 0 6 12 18 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-20v i d =-12a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized -v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance p-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j UD4305
7 n-ch and p-ch fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds (v) -i d (a) tc=25 o c single pulse 100ms 100us 1ms 10ms dc ` 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t j peak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.3 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive waveform UD4305
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